Optimization of Power in Flip-Flop Group using Clock Gating and Power Gating with Variable Body-Bias Technique
Authors:TASKEEN KAUR DHANJAL, APARNA KARWAL
Abstract: Energy dissipation is a very critical parameter that has to be taken into account during the design of Very Large Scale Integration (VLSI) circuits. With the rapid progress in semiconductor technology, chip density and operation frequency have increased, making the power consumption in battery-operated portable devices a major concern. Integrated Circuit (IC) power dissipation consists of different components depending on the circuit operating mode. First, the switching or dynamic power component dominates during the active mode of operation. Second, there are two primary leakage sources, the active component and the standby leakage component. Clock gating and power gating proves to be very effective solutions for reducing dynamic and active leakage power respectively. The two techniques are coupled in such a way that the clock gating information is used to drive the control signal of power-gating circuitry. First, a technique named Optimized Bus-Specific-Clock-Gating (OBSC) is introduced which reduces the problem of gated flip-flop selection by appropriate selection of subset of flip-flops. Then another technique named Run Time Power Gating (RTPG) is proposed for power gating the combinational logics performing redundant operations. The proposed shift registers are designed up to the layout level with 1V Power supply in 0.18um technology and simulated using Tanner Tools.
Keywords: Clock Gating, Power Dissipation, Power Gating, OBSC, RTPG.
I. INTRODUCTION
Today's consumer demands more functionality, energy efficient device and optimized power devices as time goes, so in order to optimize power of a device the simplest control technique is to shut off the clock of the sequential block of the device when there is no function required from that section for some duration With the smaller geometries in Deep Sub-Micron (DSM) technology, the number of gates that need to be integrated on a single chip, power density, and total power are increasing rapidly. The scaling of process technologies to nanometer regime has resulted in a rapid increase in leakage power dissipation [1]. Integrated Circuit (IC) power dissipation consists of different components depending on the circuit operating mode. First, the switching or dynamic power component dominates during the active